1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[D-1-2]Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates

Hiroshi Yamaguchi、Yoshiro Hirayama(1.NTT Basic Research Laboratories)
https://doi.org/10.7567/SSDM.1997.D-1-2
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