1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[D-1-3]Chemical Beam Epitaxy Growth and Characterization of Ga(In)NAs/GaAs

Kanji Takeuchi、Tomoyuki Miyamoto、Fumio Koyama、Kenichi Iga(1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)
https://doi.org/10.7567/SSDM.1997.D-1-3
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