1997 International Conference on Solid State Devices and Materials
1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
1997 International Conference on Solid State Devices and Materials
1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
[D-2-1]Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
Takuto Tsuji、Hiroo Yonezu、Mikihiro Yokozeki、Yasufumi Takagi、Naoki Ohshima(1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)
