1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[D-2-2]Band-Gap Narrowing in Carbon Doped GaAs with Various Substrate Orientations Studied by Photoluminescence Spectroscopy

S. Cho、D. Lee、E. K. Kim、S.-K. Min(1.Semiconductor Materials Research Center Korea Institute of Science and Technology)
https://doi.org/10.7567/SSDM.1997.D-2-2
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