1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan

[D-2-5]In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces

Tamotsu Hashizume、Yasuhiko Ishikawa、Toshiyuki Yoshida、Hideki Hasegawa(1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)
https://doi.org/10.7567/SSDM.1997.D-2-5
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