1997 International Conference on Solid State Devices and Materials
1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
1997 International Conference on Solid State Devices and Materials
1997年9月16日〜9月19日ACT CITY Hamamatsu, Hamamatsu, Japan
[D-2-6]Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity
B. Adamowicz、T. Saitoh、T. Hashizume、H. Hasegawa(1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University、2.Institute of Physics, Silesian Technical University)
