1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[A-1-2]Lateral Diffusion Distance Measurement for 40-80 nm Junctions by Etching/TEM-EELS Method

Y. Kunimune、N. Nishio、N. Kodama、H. Kikuchi、T. Toda、A. Mineji、S. Shishiguchi、S. Saito(1.ULSI Device Development Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.1998.A-1-2
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