1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[A-1-3]Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping

Yukihiro Kiyota、Hideaki Tanaka、Taroh Inada(1.Central Research Laboratory, Hitachi、2.College of Engineering, Hosei University)
https://doi.org/10.7567/SSDM.1998.A-1-3
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