1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[A-1-4]Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si

Jianxin Xia、Tomoya Saito、Ryangsu Kim、Takenori Aoki、Yoshinari Kamakura、Kenji Taniguchi(1.Department of Electronics and Information Systems, Osaka University)
https://doi.org/10.7567/SSDM.1998.A-1-4
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