1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[A-1-5]Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO2 Chemical Vapor Deposition

Takayuki Aoyama、Kunihiro Suzuki、Hiroko Tashiro、Yoko Tada、Yuji Kataoka、Hiroshi Arimoto、Kei Horiuchi(1.Fujitsu Laboratories Ltd.)
https://doi.org/10.7567/SSDM.1998.A-1-5
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