1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[A-2-1]Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma

Seiji Samukawa、Hiroto Ohtake、Ko Noguchi(1.Silicon Systems Research Laboratories、2.ULSI Device Development Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.1998.A-2-1
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