1998 International Conference on Solid State Devices and Materials
1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
[A-2-2]Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method
Kenji Ooba、Yoshimitsu Nakashima、Anri Nakajima、Shin Yokoyama(1.Research Center for Nanodevices and Systems, Hiroshima University)
