1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[A-2-3]Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment

Yuji Saito、Katsuyuki Sekine、Masaki Hirayama、Tadahiro Ohmi(1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)
https://doi.org/10.7567/SSDM.1998.A-2-3
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