1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[A-2-5]Formation of Very Thin Epitaxial Al2O3 Pre-Layer with Very Smooth Surface on Si(111) Using Protective Oxide Layer

Young-Chul Jung、Hiroyuki Miura、Makoto Ishida(1.Department of Electric and Electronic Engineering, Toyohashi University of Technology)
https://doi.org/10.7567/SSDM.1998.A-2-5
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