1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[B-1-2]Trap Assisted Leakage Mechanism of 'worst' Junction in Giga-bit DRAM Using Negative Word-Line Voltage

Hiroshi SUZUKI、Manabu KOJIMA、Yasuo NARA(1.Fujitsu Laboratories Ltd.)
https://doi.org/10.7567/SSDM.1998.B-1-2
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