1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[B-1-3]Silicide-Extension Technology for High-Density Embedded SRAM Cells in 0.18um-CMOS Generation and Beyond

K. Matsui、K. Noda、K. Inoue、T. Itani、H. Iwasaki、T. Yoshii、T. Tanigawa(1.ULSI Device Development Laboratory, NEC Corporation)
https://doi.org/10.7567/SSDM.1998.B-1-3
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