1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[B-1-4]Optimization of Giga-bit DRAM Cell Transistors by Channel and Drain Engineering

M. Kojima、H. Suzuki、T. Miyashita、H. Anzai、T. Nagata、K. Takahashi、M. Sato、Y. Nara(1.Fujitsu Laboratories Ltd.)
https://doi.org/10.7567/SSDM.1998.B-1-4
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