1998 International Conference on Solid State Devices and Materials
1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
[C-1-3]Lateral Composition Modulation Induced Structural Anisotropy in InP/GaInP Quantu Dot System
Hong-Wen Ren、Mitsuru Sugisaki、Shigeo Sugou、Kenichi Nishi、A. Gomyo、Yasuaki Masumoto(1.Single Quantum Dot Project, ERATO, JST, c/o Optoelectronics and High Freq. Device Res. Labs. NEC Corp.、2.Optoelectronics and High Frequency Device Research Labs. NEC Corp.、3.Institute of Physics, University of Tsukuba)
