1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[C-1-6]GaAs Nanocrystals Fabricated by Ga and As Ion Implantation

Y. Kanemitsu、S. Mimura、S. Okamoto、K. S. Min、H. A. Atwater(1.Graduate School of Materials Science, Nara Institute of Science and Technology、2.Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology)
https://doi.org/10.7567/SSDM.1998.C-1-6
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