1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
戻る
International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[C-2-4]Fabrication of High-Resolution and High-Aspect-Ratio Pattering on a Stepped Substrate by Scanning Probe Lithography Using a Multilayer-Resist System

Masayoshi Ishibashi、Nami Sugita、Seiji Heike、Hiroshi Kajiyama、Tomihiro Hashizume(1.Advanced Research Laboratory, Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.1998.C-2-4
PDFダウンロードPDFダウンロード
戻る