1998 International Conference on Solid State Devices and Materials
1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
[D-1-3]RF Noise Study of Small Gate Width Si-MOSFETs up to 8GHz Application for Low Power Consumption
E. Morifuji、C. E. Biber、W. Bachtold、T. Ohguro、T. Yoshitomi、H. Kimijima、T. Morimoto、H. S. Momose、Y. Katsumata、H. Iwai(1.Toshiba Corporation、2.Swiss Federal Institute of Technology (ETH))
