1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
戻る
International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[D-2-3]Stress-Induced Device Degradation Due to Die-Attach Process after Area Bump Formation

Nobuhiro Shimoyama、Katsuyuki Machida、Masakazu Shimaya、Hakaru Kyuragi(1.NTT System Electronics Laboratories)
https://doi.org/10.7567/SSDM.1998.D-2-3
PDFダウンロードPDFダウンロード
戻る