1998 International Conference on Solid State Devices and Materials
1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
1998 International Conference on Solid State Devices and Materials
1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
[D-2-4]Oxide Thickness Dependence of Hot Carrier Stress Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET's
Tahui Wang、N. K. Zous、L. Y. Huang、C. K. Yeh、T. S. Chao(1.Department of Electronics Engineering, National Chiao-Tung University、2.National Nano Devices Lab.)
