1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[D-2-5]Enhanced-Mobility Deep Submicron Strained-Si n-MOSFETs

Kern Rim、Judy L. Hoyt、James F. Gibbons(1.Solid State Electronics Laboratory, Stanford University)
https://doi.org/10.7567/SSDM.1998.D-2-5
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