1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[LA-1]Buried Insulator Engineering for sub-0.05μm Fully-Depleted SOI-MOSFET to Reduce the Drain Induced Barrier Lowering

Risho Koh(1.Silicon systems research laboratory, NEC Corporation)
https://doi.org/10.7567/SSDM.1998.LA-1
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