1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan
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International Conference on Solid State Devices and Materials
1998 International Conference on Solid State Devices and Materials

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜9月10日International Conference Center Hiroshima, Hiroshima, Japan

[LA-3]Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃

Kenji Fukuda、Kiyoko Nagai、Toshihiro Sekigawa、Sadafumi Yoshida、Kazuo Arai、Masahito Yoshikawa(1.New Energy and Industrial Technology Development Organization, Electrotechnical Laboratory、2.Japan Atomic Energy Research Institute)
https://doi.org/10.7567/SSDM.1998.LA-3
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