1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[A-1-2]Leakage Mechanism of Local Junctions Forming Main or Tail Mode of DRAM Retention Characteristics

Shuichi Ueno、Yasuo Inoue、Masahide Inuishi(1.ULSI development center, MITSUBISHI electric corporation)
https://doi.org/10.7567/SSDM.1999.A-1-2
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