1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[A-1-4]A New Observation of the Width Dependent Hot Carrier Effect in Shallow-Trench-Isolated P-MOSFET's

Steve S. Chung、W.-J. Yang、C.-M. Yih、J.-J. Yang(1.Department of Electronic Engineering, National Chiao Tung University、2.Worldwide Semiconductor Manufacturing Co.)
https://doi.org/10.7567/SSDM.1999.A-1-4
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