1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[A-2-2]Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs

Nobuyuki Sano、Kenji Natori、Kazuya Matsuzawa、Mikio Mukai(1.Institute of Applied Physics, University of Tsukuba、2.Semiconductor Technology Academic Research Center (STARC))
https://doi.org/10.7567/SSDM.1999.A-2-2
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