1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[B-1-3]Anomalous Hot Carrier Degradation of nMOSFETs with an Ultra-Shallow Source/Drain Extension

Kaori Nakamura、Eiichi Murakami、Shin'ichiro Kimura(1.ULSI Research Department, Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1999.B-1-3
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