1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[B-2-1]Oxide Mediated Solid Phase Epitaxy (OMSPE) of Silicon: A New Low Temperature Epitaxy Technique Using Intentionally Grown Native Oxide

I. Mizushima、Y. Mitani、K. Miyano、S. Kambayashi(1.Microelectronics Engineering Laboratory, R&D Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1999.B-2-1
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