1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[B-2-3]Study of an Elevated Drain Fabrication Method for Ultra Shallow Junction

M. Nakano、H. Kotaki、K. Sugimoto、T. Okumine、F. Yoshioka、S. Kakimoto、K. Ohta、N. Hashizume(1.Advanced Technology Research Laboratories, Sharp Corporation)
https://doi.org/10.7567/SSDM.1999.B-2-3
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