1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[C-2-2]Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method

Takayuki Inoue、Yoji Seki、Osamu Oda、Satoshi Kurai、Yoichi Yamada、Tsunemasa Taguchi(1.Central R&D Laboratory, Japan Energy Corporation、2.Faculty of Engineering, Yamaguchi University)
https://doi.org/10.7567/SSDM.1999.C-2-2
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