1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[C-2-5]Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma

Shin-Ya Ootomo、Tamotsu Hashizume、Hideki Hasegawa(1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)
https://doi.org/10.7567/SSDM.1999.C-2-5
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