1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1999 International Conference on Solid State Devices and Materials

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜9月24日Nihon Toshi Center Kaikan, Tokyo, Japan

[D-3-3]Proposal of Analytical Single-Electron Transistor Model and Its Implication for Realistic Circuit Operation

K. Uchida、K. Matsuzawa、J. Koga、R. Ohba、S. Takagi、A. Toriumi(1.Advanced LSI Technology Laboratory, Toshiba Corporation)
https://doi.org/10.7567/SSDM.1999.D-3-3
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