2000 International Conference on Solid State Devices and Materials
2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
[A-1-2]New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's
S. J. Chen、H. L. Kao、Steve S. Chung、C. C. Chen、C. Y. Chang、H. C. Lin(1.Department of Electronic Engineering, National Chiao Tung University、2.National Nano Device Lab.)
