2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
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International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan

[A-2-4]Copper Ion Drift Rates in Porous Methylsilsesquiazane Dielectric Films

S. Mukaigawa、T. Oda、T. Aoki、Y. Shimizu、T. Kikkawa(1.Research Center for Nanodevices and Systems, Hiroshima University、2.Tonen Corporation)
https://doi.org/10.7567/SSDM.2000.A-2-4
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