2000 International Conference on Solid State Devices and Materials
2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
[A-2-6]Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process
Soo Gun Lee、Hyeok-Sang Oh、Hong-Jae Shin、Jin-Gi Hong、Hyeon-Deok Lee、Hokyu Kang(1.Process Development Team, Semiconductor R&D center, Samsung Electronics)