2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
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International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan

[B-1-2]Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in MOSFETs with N2O and NO Oxynitrides

Takamitsu Ishihara、Shin-ichi Takagi、Masaki Kondo(1.Advanced LSI Thechnology Laboratory, Research and Development center, Toshiba corporation、2.Semiconductor company, System LSI Division, Toshiba corporation)
https://doi.org/10.7567/SSDM.2000.B-1-2
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