2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
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International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan

[B-1-3]The Impact for Gate Oxide Scaling (32A-12A) and Power Supply for Sub-0.1 μm CMOSFETs

W. K. Yeh、C. Y. Lin、S. M. Cheng、C. T. Huang、H. H. Shih、J. K. Chen、F. T. Liou(1.United Microelectronics Corp., Logic Technology Department, Technology & Process Development Division)
https://doi.org/10.7567/SSDM.2000.B-1-3
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