2000 International Conference on Solid State Devices and Materials
2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
[B-1-4]Surface Channel Metal Gate CMOS with Light Counter Doping and Single Work Function Gate Electrode
K. T. Nishinohara、Y. Akasaka、T. Saito、A. Yagishita、A. Murakoshi、K. Suguro、T. Arikado(1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.)
