2000 International Conference on Solid State Devices and Materials
2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
2000 International Conference on Solid State Devices and Materials
2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
[B-1-7]Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
Naruhisa Miura、Yuji Abe、Kohei Sugihara、Toshiyuki Oishi、Taisuke Furukawa、Takumi Nakahata、Katsuomi Shiozawa、Shigemitsu Maruno、Yasunori Tokuda(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation)
