2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
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International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan

[B-1-8]A Novel T-Shaped Shallow Trench Isolation Technology Using Sidewall Spacer for 512Mbit Flash Memories and Beyond

S. H. Hong、D. H. Ahn、M. H. Park、T. K. Kim、H. K. Kang、J. T. Moon(1.Semiconductor R&D Center, Samsung Electronics Co., LTD)
https://doi.org/10.7567/SSDM.2000.B-1-8
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