2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
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International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan

[B-2-3]Comparison of Sub-Bandgap Impact Ionization in Deep-Sub-Micron Conventional and Lateral Asymmetrical Channel nMOSFETs

Anil K. G.、S. Mahapatra、V. Ramgopal Rao、I. Eisele(1.Institute of Physics, Universitat der Bundeswehr Munich、2.Department of Electrical Engineering, Indian Institute of Technology)
https://doi.org/10.7567/SSDM.2000.B-2-3
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