2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
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International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan

[B-2-4]Impact of Strained-Si Channel on CMOS Circuit Performance under the Sub-100nm Regime

Tetsuo Hatakeyama、Kazuya Matsuzawa、Shin-ichi Takagi(1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)
https://doi.org/10.7567/SSDM.2000.B-2-4
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