2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
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International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan

[B-2-5]Improved Low Temperature Characteristics of Raised Source and Drain (RSD) Si1-x Gex PMOSFET's

H. J. Huang、K. M. Chen、T. Y. Huang、G. W. Huang、C. Y. Chang(1.Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University、2.National Nano Device Laboratories)
https://doi.org/10.7567/SSDM.2000.B-2-5
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