2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan
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International Conference on Solid State Devices and Materials
2000 International Conference on Solid State Devices and Materials

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜8月31日Sendai International Center, Sendai, Japan

[B-2-6]Measurement of Hole Transport Parameters in Ultra-Thin SiGe Layers and Their Application in 2D Device Simulations of Heterojunction pMOSFETs

R. J. P. Lander、Y. V. Ponomarev、W. B. de Boer、R. Loo、M. Caymax(1.Philips Research Laboratories、2.IMEC)
https://doi.org/10.7567/SSDM.2000.B-2-6
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