2001 International Conference on Solid State Devices and Materials

2001 International Conference on Solid State Devices and Materials

2001年9月26日〜9月28日Diamond Hotel, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2001 International Conference on Solid State Devices and Materials

2001 International Conference on Solid State Devices and Materials

2001年9月26日〜9月28日Diamond Hotel, Tokyo, Japan

[A-2-1]Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid

H. Aoki、K. Watanabe、T. Iizuka、N. Ishikawa、K. Mori(1.ULSI Device Development Division, NEC Corporation、2.Central Research Laboratory, KANTO CHEMICAL CO., INC.)
https://doi.org/10.7567/SSDM.2001.A-2-1
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