2001 International Conference on Solid State Devices and Materials
2001年9月26日〜9月28日Diamond Hotel, Tokyo, Japan
[C-1-1]RF Power Performance of AlGaN/GaN HJFETs
N. Hayama、Y. Okamoto、K. Kasahara、T. Nakayama、Y. Ohno、H. Miyamoto、Y. Ando、M. Kazuhara、 NEC, Japan(1.Photonic and Wireless Devices Research Laboratories, NEC Corporation、2.The University of Tokushima)