2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
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International Conference on Solid State Devices and Materials
2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan

[A-1-4]Evaluation of change in drain current due to strain in 0.13-μm-node MOSFETs

Yukihiro Kumagai、Hiroyuki Ohta、Hideo Miura、Fumitoshi Ito、Keiichi Maekawa、Akihiro Shimizu(1.Mechanical Engineering Research Laboratory, Hitachi, Ltd.、2.Semiconductor & Integrated Circuits Div., Hitachi, Ltd.、3.Hitachi ULSI Systems, Co.)
https://doi.org/10.7567/SSDM.2002.A-1-4
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